Infrared detector and fabrication method thereof

Details Infrared detector and fabrication method thereof Infrared detector and fabrication method thereof

H - Electricity

01

L

H01L 31/0264 (2006.01) G01J 1/44 (2006.01) H01L 31/06 (2006.01) H01L 31/103 (2006.01) H01L 31/108 (2006.01) H01L 31/18 (2006.01)

Patent

CA 2182041

In a IR detector and a fabrication method thereof, the IR detector has a insulating thin film (3) made up of insulating material, many semiconductor layers (1) each having an island shape formed on the insulating thin film (3), a forward bias connection section (5) and a backward bias connection section (6) formed for each semiconductor layer (1) to be forward and backward biases to an external bias voltage, and a metal thin film (2) for electrically connecting the semiconductor layers (1) to each other through both the forward bias connection section and the backward bias connection section (5 and 6).

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