Infrared radiation-detection device

Details Infrared radiation-detection device Infrared radiation-detection device

H - Electricity

01

L

H01L 29/15 (2006.01) G01J 5/28 (2006.01) H01L 31/0352 (2006.01) H01L 31/111 (2006.01)

Patent

CA 2264113

An Al x Ga1-x As/GaAs/Al G x a As1-x quantum well (308, 406, 408) exhibiting a bound-to-quasibound intersubband absorptive transition is described. The bound-to-quasibound transition exists when the first excited state has the same energy as the "top" (i.e., the upper-most energy barrier) of the quantum well (308, 406, 408). The energy barrier for thermionic emission (ET) is thus equal to the energy required for intersubband absorption (EP). Increasing the energy barrier in this way reduces dark current. The amount of photocurrent generated by the quantum well (308, 406, 408) is maintained at a high level.

Puits quantique d'AlxGA1-xAs/GaAs/Al Gxa AS1-x à transition à absorption inter-sous-bande, liée à quasi-liée. La transition-liée à quasi liée apparaît lorsque le premier état excité a la même énergie que le "sommet" (la barrière d'énergie supérieure) du puits quantique. La barrière d'énergie pour l'émission thermionique est ainsi égale à l'énergie nécessaire pour l'absorption inter-sous-bande. L'augmentation de cette manière de la barrière d'énergie permet de réduire le courant d'obscurité. La quantité de photocourant générée par le puits quantique est maintenue à un niveau élevé.

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