Infrared semiconductor devices

Details Infrared semiconductor devices Infrared semiconductor devices

H - Electricity

01

S

345/12, 345/32

H01S 3/02 (2006.01) H01L 33/00 (2006.01) H01S 5/30 (2006.01) H01S 5/34 (2006.01)

Patent

CA 1111533

Abstract of the Disclosure It is taught that infrared light can be produced by applying a voltage to a semiconductor device with a superlattice region and, further, that a population inversion can be achieved in such a device so that infrared amplification and oscillation can be produced. Methods of producing infrared radiation and of amplifying infrared radiation utilizing semiconductor devices with superlattice regions are disclosed. Also, semiconductor devices with superlattice regions for use as a laser amplifier or oscillator are taught.

315065

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