H - Electricity – 01 – L
Patent
H - Electricity
01
L
345/27
H01L 31/10 (2006.01) H01L 31/02 (2006.01) H01L 31/075 (2006.01) H01L 31/105 (2006.01)
Patent
CA 1292055
InGaAs/InP TYPE PIN PHOTODIODES ABSTRACT OF THE DISCLOSURE: An InGaAs/InP type PIN photodiode comprising an n-InP substrate 1 having one surface and an opposite surface, an n-electrode 8 provided on said one surface of the n-InP substrate, an n-InGaAs layer 2 formed by epitaxial growth on said opposite surface of the n-InP substrate 1, a p-InGaAs layer 5 formed by diffusing a p-type impurity in a part of said n-InGaAs layer 2, a ring-like p-electrode 4 provided on the p-InGaAs layer 5. The portion of the p-InGaAs layer 5 encircled by the ring-like p-electrode 4 is partly removed to form a recess 9, and the thickness of the recessed por- tion of the p-InGaAs layer 5 is less than 2.0 µm. Further, the thickness L of the p-InGaAs layer 5 under the p- electrode 4 is larger than 3.0 µm. Light is introduced into said recess 9. With such arrangement, the structure of the n-InP window layer (shown by 24 in Fig. 2) of the conventional example of Fig. 2 can be omitted. Further, the light detection sensitivity can be improved and dark current can relatively be lessened.
577345
Bereskin & Parr
Sumitomo Electric Industries Ltd.
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