Initial plasma treatment for vertical dry etching of sio2

Details Initial plasma treatment for vertical dry etching of sio2 Initial plasma treatment for vertical dry etching of sio2

H - Electricity

01

L

H01L 21/461 (2006.01) C23C 16/40 (2006.01) H01L 21/00 (2006.01) H01L 21/311 (2006.01)

Patent

CA 2349033

A method of making a semiconductor device is disclosed wherein a plasma treatment is carried out prior to carrying out an etch step.

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