Inp-based lasers with reduced blue shifts

Details Inp-based lasers with reduced blue shifts Inp-based lasers with reduced blue shifts

H - Electricity

01

S

H01S 5/343 (2006.01) H01S 5/32 (2006.01) H01S 5/34 (2006.01)

Patent

CA 2256618

An InP-based opto-electronic integrated circuit including an active layer having one or more quantum wells (36, 38). According to the invention, a barrier layer (34) of AlGaInAs is formed, preferably between the quantum wells and the substrate (30) to prevent the migration of species from the substrate and lower InP layers that tend to shift the emission wavelengths of the quantum wells to shorter wavelengths, i.e., blue shift. The barrier layer can be patterned so that some areas of the quantum wells exhibit blue shifting to a shorter wavelength while other areas retain their longer wavelength during annealing.

Cette invention se rapporte à un circuit intégré opto-électronique à base d'InP, qui contient une couche active ayant un ou plusieurs puits quantiques (36, 38). Selon cette invention, une couche barrière (34) de AlGaInAs est formée, de préférence entre les puits quantiques et le substrat (30) pour empêcher la migration des espèces à partir du substrat et à partir des couches InP inférieures qui tendent à déplacer les longueurs d'ondes d'émission des puits quantiques vers des longueurs d'ondes plus courtes, ce phénomère étant appelé blue-shift. La couche barrière peut être structurée pour que certaines zones des puits quantiques développent un phénomène de blue-shift vers une longueur d'onde plus courte, pendant que d'autres zones conservent leur longueur d'onde plus longue pendant le recuit.

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