Inp-based mqw-laser

Details Inp-based mqw-laser Inp-based mqw-laser

H - Electricity

01

S

H01S 5/34 (2006.01) H01S 5/343 (2006.01)

Patent

CA 2331504

An InP-based MQW-laser for the 1.3 µm band has at least one, preferably several, well layers sandwiched between barrier layers having larger band gaps. The well layers and the barrier layers both have essentially the same content composition of group-III elements, but different content compositions of group-V elements. The well layers have lattice constants which deviate from the substrate within the limits of possible voltages, so-called mismatching, whereas the well layers have a smaller mismatch.

La présente invention concerne un laser InP à puits quantiques multiples destiné à la bande des 1,3 µm comportant au moins une, mais de préférence plusieurs couches puits prises en sandwich entre des couches barrières à espace interbandes plus grands. Les couches puits et les couches barrières ont toutes les deux sensiblement la même teneur en élément du groupe III, mais des teneurs différentes en éléments du groupe V. Les couches puits présentent des constantes réseau qui s'écartent de la constante réseau du substrat, mais dans les limites des tensions possibles, on parle ici des écarts caractéristiques, alors que les couches puits présentent des écarts inférieurs.

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