H - Electricity – 01 – S
Patent
H - Electricity
01
S
345/33
H01S 5/227 (2006.01) H01S 3/05 (2006.01) H01S 5/323 (2006.01) H01L 33/00 (2006.01)
Patent
CA 2005555
Abstract of the Disclosure The wafer containing the laser structure grown in the described way, is thinned on the backside (17) preferably to 100-200 /um, thereafter, onto the p-side (16) preferably Au/Au Zn is applied in a thickness of 200-1400 ° as a contact metal layer (8a) , while onto the n-side (17) contact metal layer (Bb) is applied, pre- ferably Au Ge/Ni/Au in a thickness of 3000/700/1000 .ANG. by means of vaporization, thereafter contact layers (Ba,Bb) are subjected to heat treatment at 420 C° in H2 gas space, preferably for 1D seconds.
Habermayer Istvan
Labadi Zoltan
Lendvay Odon
Rakovics Vilmos
G. Ronald Bell & Associates
Habermayer Istvan
Labadi Zoltan
Lendvay Odon
Magyar Tudomanyos Akademia Muszaki Fizikai Kutato Intezete
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