H - Electricity – 04 – J
Patent
H - Electricity
04
J
H04J 14/02 (2006.01) H01L 27/144 (2006.01) H04B 10/148 (2006.01)
Patent
CA 2181846
The present invention relates to a monolithic integrated demultiplexing photoreceiver (10) that is formed on a semi-insulating InP substrate(16). A frequency routing device (11) is formed on the substrate and includes a first plurality of InP/InGaAs semiconductor layers. At least one p-i-n photodiode (12) is also formed on the substrate and includes a second plurality of InP/InGaAs semiconductor layers. Additionally, at least one single heterostructure bipolar transistor (18) is formed on the substrate and includes a third plurality of InP/InGaAs semiconductor layers. At least one layer from each of the first, second and third plurality of layers are substantially identical to one another.
La présente invention porte sur un photorécepteur démultiplexeur intégré monolithique (10) formé sur un substrat semi-isolant d'InP (16). Un dispositif d'acheminement de signaux (11) est formé sur ce substrat et comprend une première pluralité de couches semi-conductrices d'InP/InGaAs. Une photodiode p-i-n (12) au moins est également formée sur le substrat et comprend une seconde pluralité de couches semi-conductrices d'InP/InGaAs. De plus, un transistor bipolaire à hétérostructure simple (18) au moins est formé sur le substrat et comprend une troisième pluralité de couches semi-conductrices d'InP/InGaAs. Trois couches au moins, appartenant chacune à une pluralité différente parmi les trois pluralités de couches, sont essentiellement identiques.
At&t Ipm Corp.
Kirby Eades Gale Baker
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