Insulated gate field effect transistor

Details Insulated gate field effect transistor Insulated gate field effect transistor

H - Electricity

01

L

356/149

H01L 29/08 (2006.01) H01L 29/10 (2006.01) H01L 29/78 (2006.01)

Patent

CA 1181532

- 1 - Abstract: An insulated gate field effect transistor is formed in one surface of a semiconductor substrate. The surface portion of a channel has an impurity distribution of the conduction type opposite that of the substrate, and the deeper portion has an impurity distribution of the same conduction type as that of the substrate. At least one of a source and a drain is formed of an impurity layer of the conduction type opposite that of the substrate with its impurity distribution gently sloped by double diffusion processes. The result is to depress the undesirable short- channel effect experienced by prior transistor constructions and to raise the breakdown voltage.

409942

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