Insulated gate field-effect transistor read-only memory cell

Details Insulated gate field-effect transistor read-only memory cell Insulated gate field-effect transistor read-only memory cell

G - Physics

11

C

352/82.3

G11C 11/40 (2006.01) G11C 16/04 (2006.01) H01L 27/08 (2006.01) H01L 29/792 (2006.01)

Patent

CA 1070836

AN INSULATED GATE FIELD-EFFECT TRANSISTOR READ-ONLY MEMORY CELL JAMES A. HAYES ABSTRACT OF THE DISCLOSURE A read-only memory cell formed from a single insulated gate field-effect transistor may be selectively programmed by being operated under suitable biasing conditions to cause some of the electrons flowing between the source and drain to acquire sufficient energy to be injected into and trapped in the insulating material separating the channel from the gate electrode. The trapped electrons cause a change in the current-voltage characteristics of the transistor which may be detected during reading of the memory cell most easily by reversing the polarity of the source and the drain. An array of such cells may be utilized as a ROM, PROM or EPROM.

311399

Affiliated with

Also associated with

Rating

Insulated gate field-effect transistor read-only memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Insulated gate field-effect transistor read-only memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Insulated gate field-effect transistor read-only memory cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-464698