Insulated gate rectifier with improved current- carrying...

Details Insulated gate rectifier with improved current- carrying... Insulated gate rectifier with improved current- carrying...

H - Electricity

01

L

356/161

H01L 29/78 (2006.01)

Patent

CA 1201217

INSULATED GATE RECTIFIER WITH IMPROVED CURRENT-CARRYING CAPABILITY ABSTRACT OF THE DISCLOSURE A parasitic P-N-P-N structure is inherent in a typical insulated gate rectifier (IGR). Such structure is capable of latching the IGR into a spurious current- carrying state. To reduce this risk one of the IGR P- type regions includes two portions. One of these portions is doped substantially higher in concentration than the other to reduce its resistance to holes, and it comprises a deeper diffused region than the other portion.

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