Insulated-gate semiconductor device with improved...

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H01L 29/78 (2006.01) H01L 21/265 (2006.01) H01L 21/331 (2006.01) H01L 21/336 (2006.01) H01L 29/10 (2006.01) H01L 29/417 (2006.01) H01L 29/739 (2006.01)

Patent

CA 1216968

INSULATED-GATE SEMICONDUCTOR DEVICE WITH IMPROVED BASE-TO-SOURCE ELECTRODE SHORT AND METHOD OF FABRICATING SAID SHORT Abstract of the Disclosure Insulated-gate semiconductor devices, such as MOSFETs or IGTs, include an implant shorting region adjoining both base and source regions with the implant shorting region being conductively coupled to the source electrode so as to implement a base-to-source electrode short. The implant shorting region can be formed without a specially-aligned mask by utilizing the gate electrode as an implant mask.

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