Insulated gate type transistors

Details Insulated gate type transistors Insulated gate type transistors

H - Electricity

01

L

356/73

H01L 29/78 (2006.01) H01L 29/739 (2006.01)

Patent

CA 1158365

Abstract of the Disclosure An insulated gate type transistor has a nonsaturating current characteristic as well as a saturating current type characteristic. P+, N, N+ or N+, P, P+ regions are juxtaposed in the horizontal direction in a semiconductor layer formed on an insulating layer. A gate electrode is provided on a portion of the N or P region through a gate insulating film, and the thickness of the N or P region beneath the gate electrode is less than .pi./2 times of a Debye length inherent to the semiconductor constituting the active region.

385982

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