Insulator for integrated circuits and process

Details Insulator for integrated circuits and process Insulator for integrated circuits and process

H - Electricity

01

L

H01L 21/316 (2006.01) H01L 21/762 (2006.01) H01L 23/29 (2006.01) H01L 23/522 (2006.01) H01L 23/532 (2006.01) H01L 27/07 (2006.01)

Patent

CA 2162189

An insulator for covering an interconnection wiring level in a surface thereof on a semiconductor substrate containing semiconductor devices formed by curing a flowable oxide layer and annealing. The annealing is carried out in the presence of hydrogen and aluminum to obtain a dielectric constant of the oxide layer to a value below 3.2. Also provided is electrical insulation between neighboring devices using the flowable oxide which is cured and annealed. In this case, the annealing can be carried out in hydrogen with or without the presence of aluminum.

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