Integrated base coupled transistors

Details Integrated base coupled transistors Integrated base coupled transistors

H - Electricity

01

L

356/124

H01L 29/72 (2006.01) H01L 21/8222 (2006.01) H01L 23/535 (2006.01) H01L 27/06 (2006.01) H01L 29/735 (2006.01)

Patent

CA 1045250

Abstract of the Disclosure A pair of bipolar transistors are formed in a semiconductor substrate with each transistors having at least one emitter, one base and at least one collector. At least the base is in the form of a doped zone in the substrate. The two base zones are electrically conductively connected to one another and the transistors are constructed or arranged in the substrate in such a manner that in each case free boundary faces of the two base zones lie opposite one another. The base connection is formed by an additionally doped zone in the interspace between the base zones, the doped zone having the same type of doping as the base zones.

242076

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