Integrated circuit

Details Integrated circuit Integrated circuit

H - Electricity

01

L

356/126

H01L 29/49 (2006.01) H01L 27/088 (2006.01)

Patent

CA 2014296

A depletion operation is realized by using a depletion type MOSFET even at the room temperature or the liquid nitrogen temperature without doping the channel portion below the gate electrode with impurities having a conductivity type, which is opposite to the conductivity type of the semiconductor substrate. Further this FET can construct an inverter together with an enhancement type FET and these can be integrated on one substrate.

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