Integrated circuit comprising field effect transistors and a...

Details Integrated circuit comprising field effect transistors and a... Integrated circuit comprising field effect transistors and a...

G - Physics

11

C

352/82

G11C 17/00 (2006.01) G11C 16/12 (2006.01)

Patent

CA 1235506

14 ABSTRACT: Field effect transistors having a short channel length are desirable for carrying out logic operations at a high speed. However, they are then not capable of withstanding the comparatively high programming and eras- in voltage at which an (E)EPROM has to be operated. During the programming cycle the field effect transistors are kept in the current-non-conducting state, whilst recording the logic information obtained by the logic operations, the "fast" transistors are nevertheless capable of withstanding the comparatively high voltage.

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