Integrated circuit contact method

Details Integrated circuit contact method Integrated circuit contact method

H - Electricity

01

L

356/162

H01L 21/44 (2006.01) H01L 21/265 (2006.01) H01L 21/285 (2006.01)

Patent

CA 1219685

- 7 - INTEGRATED CIRCUIT CONTACT METHOD Abstract Source-drain to substrate shorts and allied problems related to misalignment of contact windows are curable in CMOS technology by a non-selective implant into the contact windows of both types. Key to success of the technique is designing devices and masks so the problem develops on one type of device in preference to the other and tailoring the dopant levels so the non-selective implant will selectively type-convert desired regions.

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