Integrated circuit having complementary bipolar transistors

Details Integrated circuit having complementary bipolar transistors Integrated circuit having complementary bipolar transistors

H - Electricity

01

L

356/30

H01L 29/70 (2006.01)

Patent

CA 1075369

ABSTRACT: An integrated circuit having two vertical complementary bipolar transistors formed from a semi- conductor substrate of a first conductivity type, and a deposited layer of second semiconductor type is dis- closed. Conductor tracks consisting of portions of the semiconductor layer are supported by a dielectric, while other portions of the semiconductor layer are used for the contacts for certain active zones for the transistors. - 35 -

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