Integrated circuit having dislocation-free substrate

Details Integrated circuit having dislocation-free substrate Integrated circuit having dislocation-free substrate

H - Electricity

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H01L 29/12 (2006.01) H01L 29/161 (2006.01) H01L 29/167 (2006.01) H01L 29/201 (2006.01) H01L 29/207 (2006.01) H01L 29/221 (2006.01) H01L 29/225 (2006.01)

Patent

CA 1237826

INTEGRATED CIRCUIT HAVING DISLOCATION FREE SUBSTRATE ABSTRACT An integrated circuit bulk substrate having a zinc blende or Wurtzite crystalline structure is alloyed with a material having atoms that replace atoms of the host semiconductor. The alloyed atoms have a bond length with the nearest neighboring host atoms that is less than the bond length of the host atoms. The number of bonded alloyed atoms is small compared to the number of host atoms to as not to substantially affect electronic conduction properties of the host material, but is large enough to virtually eliminate dislocations over a large surface area and volume of the host material on which active semiconductor devices are located.

473378

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