H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/144
H01L 21/316 (2006.01) H01L 21/3105 (2006.01) H01L 21/762 (2006.01)
Patent
CA 1066815
Abstract A semiconductor device, such as a transistor, integrated circuit or the like, having a pattern of oxidized and densi- fied porous silicon regions extending onto one of its major surfaces for isolating regions of the semiconductor is manu- facturable by a relatively simple process. The process in- volves forming porous silicon regions in the surface of the semiconductor body such as a silicon wafer, in the areas where dielectric isolation between semiconductor devices is desired. The porous silicon regions are then oxidized at a temperature sufficient to completely oxidize the porous silicon. The oxidation is such that the oxidized porous silicon extends above the surface of the semiconductor wafer. The oxidized porous silicon regions are then subjected to a temperature higher than the oxidizing temperature utilized in the previous step to cause the densification of the oxi- dized porous silicon regions. The result of this densifica- tion step is the collapse of the porous oxide to the dense structure which is substantially planar with the surface of the semiconductor wafer. This densified silicon dioxide structure has an etch rate which is substantially the same as thermally grown silicon dioxide.
266780
Aboaf Joseph A.
Broadie Robert W.
Pliskin William A.
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