G - Physics – 03 – C
Patent
G - Physics
03
C
356/147
G03C 5/00 (2006.01) H01L 21/02 (2006.01) H01L 21/306 (2006.01) H01L 21/311 (2006.01) H01L 21/316 (2006.01) H01L 21/321 (2006.01) H01L 21/762 (2006.01)
Patent
CA 1264870
INTEGRATED CIRCUIT MANUFACTURING PROCESS ABSTRACT OF THE DISCLOSURE A process is disclosed for manufacturing an integrated circuit in which multiple patterned layers of thin film materials are provided on a silicon wafer. The wafer is conditioned between the providing of layers, after each etching step, by rinsing the item with R purified water solution containing at least .01 ppm ozone, preferably between .02 and .09 ppm ozone . -1-
544260
Ackermann Arthur J.
Tremont Peter L.
Arroowhead Industrial Water Inc.
Finlayson & Singlehurst
Monsanto Company
LandOfFree
Integrated circuit manufacturing process does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Integrated circuit manufacturing process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit manufacturing process will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1180928