Integrated circuit microsatellite

H - Electricity – 01 – Q

Patent

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Details

H01Q 1/36 (2006.01) B64G 1/10 (2006.01) B64G 1/66 (2006.01) H01Q 1/28 (2006.01) H01Q 1/38 (2006.01)

Patent

CA 2306838

A plurality of silicon and GaAs wafers (32) each including integrated circuitry for providing particular functions for each wafer are mounted within a housing (19) in a stacked, spaced apart, and parallel configuration. Photodetectors and LED's are used to transmit and receive data between opposing wafers. In this manner a micro-packaged device or system is obtained for use amongst other things in microsatellites (2).

On installe une pluralité de tranches (32) de silicium et d'arséniure de gallium (GaAs) comportant chacune des circuits intégrés conçus pour assurer des fonctions propres à chaque tranche, à l'intérieur d'un logement (19), de manière à former un empilement de tranches, parallèles et espacées les unes des autres. On utilise des photodétecteurs et des diodes électroluminescentes pour émettre et recevoir des données entre des tranches se faisant face. De cette manière, il est possible de fabriquer un système ou un dispositif en microboîtier pouvant être utilisé, notamment, dans des microsatellites (2).

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