H - Electricity – 03 – F
Patent
H - Electricity
03
F
330/12
H03F 3/19 (2006.01) H03F 1/22 (2006.01)
Patent
CA 1330110
INTEGRATED CIRCUIT RF AMPLIFIER MODULE Abstract of the Disclosure A four-terminal integrated circuit high-frequency RF amplifier connects to external circuitry via a ground terminal, an RF input terminal, an RF output terminal and a DC biasing terminal. A two stage amplification architecture is employed - a current gain transistor (common-emitter) is cascoded with a subsequent voltage gain transistor (common-base) while yet maintaining RF signal inversion overall from input to output so as to increase stability. A biasing current-mirror transistor provides biasing current to the current-gain transistor. A fourth transistor connected as a forward-biased collector-base shorted diode between the current mirror biasing transistor and a common external biasing terminal supplies bias current to the current-mirror biasing transistor while simultaneously minimizing voltage swings across the current-gain transistor. The amplifier module has very low input capacitance which does not change appreciably with changes in load impedance, and operates with great stability under a wide range of different input and output conditions and RF frequencies. Because of its relative simplicity and compactness, the amplifier can be used to great advantage as an IC "building block" in a variety of different applications.
512127
Company General Electric
Craig Wilson And Company
LandOfFree
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