Integrated circuits employing ion-bombarded inp layers

Details Integrated circuits employing ion-bombarded inp layers Integrated circuits employing ion-bombarded inp layers

H - Electricity

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H01L 21/265 (2006.01) H01L 21/266 (2006.01) H01L 21/324 (2006.01) H01L 21/74 (2006.01) H01L 21/76 (2006.01) H01L 21/8252 (2006.01)

Patent

CA 1217878

- 12 - INTEGRATED CIRCUITS EMPLOYING ION-BOMBARDED InP LAYERS Abstract The property of materials in the InP system, whereby helium ion or deuteron bombarded p-type material becomes highly resistive but n-type material remains relatively conductive, is utilized to fabricate integrated circuits which include buried semiconductor interconnections or bus bars between devices.

466521

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