Integrated circuits employing proton-bombarded algaas layers

Details Integrated circuits employing proton-bombarded algaas layers Integrated circuits employing proton-bombarded algaas layers

H - Electricity

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H01L 21/324 (2006.01) H01L 21/265 (2006.01) H01L 21/266 (2006.01) H01L 21/74 (2006.01) H01L 21/76 (2006.01) H01L 21/8252 (2006.01) H01L 23/535 (2006.01)

Patent

CA 1217879

- 11 - INTEGRATED CIRCUITS EMPLOYING PROTON-BOMBARDED A1GaAs LAYERS Abstract The property of materials in the GaAs/AlGaAs system, whereby at certain doses proton bombarded n-type material becomes highly resistive but p-type material remains highly conductive, is utilized to fabrication of integrated circuits which include buried semiconductor interconnections or bus bars between devices.

466522

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