Integrated circuits having stepped dielectric regions

Details Integrated circuits having stepped dielectric regions Integrated circuits having stepped dielectric regions

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B44C 1/22 (2006.01) H01L 21/311 (2006.01) H01L 21/762 (2006.01) H01L 21/768 (2006.01)

Patent

CA 1258141

INTEGRATED CIRCUITS HAVING STEPPED DIELECTRIC REGIONS Abstract Deposited silicon dioxide may be used as a field oxide layer or for other dielectric purposes in integrated circuits. However, etching a pattern in the layer usually produces steep sidewalls that prevent good step coverage of subsequently deposited conductor layers. The present technique forms the dielectric in at least two layers (e.g., 11,12) having different densities. A sequence of anisotropic and isotropic etching results in stepped sidewalls, providing good linewidth control and good step coverage of subsequently deposited material.

546033

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