Integrated devices having titanium carbonitride diffusion...

Details Integrated devices having titanium carbonitride diffusion... Integrated devices having titanium carbonitride diffusion...

H - Electricity

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356/148

H01L 27/02 (2006.01) H01L 21/70 (2006.01) H01L 23/532 (2006.01)

Patent

CA 1241457

-8- Abstract Titanium carbonitride has been discovered to be an effective diffusion barrier material for use in metallization structures for MOS integrated-circuit devices. A layer of the material deposited under aluminum prevents deleterious aluminum-silicon or aluminum-silicide interactions.

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