Integrated fabrication method of forming connectors through...

Details Integrated fabrication method of forming connectors through... Integrated fabrication method of forming connectors through...

H - Electricity

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H01L 21/312 (2006.01) H01L 21/311 (2006.01) H01L 21/60 (2006.01) H01L 21/768 (2006.01) H05K 3/14 (2006.01) H05K 3/40 (2006.01)

Patent

CA 1082370

AN INTEGRATED FABRICATION METHOD OF FORMING CONNECTORS THROUGH INSULATIVE LAYERS Abstract of the Disclosure In integrated circuit fabrication, a method is pro- vided for forming metallic connectors through a layer of electrically insulative material. The method comprises forming a layer of electrically insulative material on a substrate and then forming a mask of photoresist material having a plurality of openings through which said insula- tive layer is exposed on said insulative layer. Then, the exposed portions of said insulative layer are removed by etching to form openings through which the underlying substrate is exposed, after which a first metal layer is deposited over the masked substrate. This metal layer is thinner than the insulative layer so that the openings in the insulative layer are only filled part way up with metal. Then, the photoresist mask is removed thereby re- moving the metal layer deposited on it to leave only the metal in the insulative layer openings. Next, a second layer of metal is deposited over the first insulative layer and over the remaining metal in said openings, after which portions of the second metal layer over the insulative layer are removed to form a metallization pattern which is con- tinuous with the metal in said openings.

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