H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/31
H01L 29/74 (2006.01) C30B 35/00 (2006.01) H01L 21/263 (2006.01) H01L 21/28 (2006.01) H01L 29/06 (2006.01) H01L 29/744 (2006.01)
Patent
CA 1063250
ABSTRACT OF THE DISCLOSURE An integrated amplifying gate thyristor is pro- vided with an integral diode in the thyrristor structure in the same semiconductor body. The diode provides gate assist turn-off capability with the same gate electrode used to turn-on a pilot thyristor of the device. The common cathode-base region of the pilot and main thyristors also is common with the anode region of the diode. The current gain of the NPN transistor structure formed at the diode and the common anode-base region at the diode is less than the ratio of IFB/Ig, where IFB is the forward anode current on triggering the main thyristor into the low impedance conduction state by applying a threshold negative gate assist current (IG) and an operating anode-cathode load potential, and Ig is a negative gate current selected to assist in turn-off of the main thyristor. Preferably, the current gain of said NPN transistor structure at the diode is controlled by selectively irradiating the diode preferably with electron radiation, by adding a shallow impurity lip to the cathode region of the diode toward the main thyristor, or both.
251209
Page Derrick J.
Schlegel Earl S.
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