Integrated hall element

Details Integrated hall element Integrated hall element

H - Electricity

01

L

356/94

H01L 43/06 (2006.01) H01L 27/22 (2006.01)

Patent

CA 1263764

Abstract of the Invention The Hall element consists of a substrate (6), of a semiconductor layer (5), of a surface layer (22), of an insulation layer (19), of contact diffusions (7 to 12), of insulation rings (16;17, 17; 18) which are all made of P or N semiconductor material. The Hall element which has two sensor terminals (..., S2), is subdivided by at least one plane of section into arrangements (2, 3) which are alternately turned upside down or not turned around and are located within the semiconductor layer (5). Between at least two points of each upper and lower surface of the arrangements (2,3) and one of the equipotential points of an adjoining arrangement are electric connections (a2, b2, c2, d2), whereby each of he points of the outermost surfaces of the current terminals (C1, C2) of the Hall element by means of connections (a1; b1; c1; d1, 20 or a3; b3; c3; d3, 21). These connections and the contact diffusions (7 to 12) are made of N+ material. This construction of the Hall element makes it possible to realize very large Hall elements which can be used in electricity meters, for example, to measure a magnetic field (H) produced by an electric current.

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