Integrated micromechanical sensor element

Details Integrated micromechanical sensor element Integrated micromechanical sensor element

H - Electricity

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H01L 27/146 (2006.01) G01J 1/02 (2006.01) G01J 5/02 (2006.01) G01J 5/20 (2006.01) H01L 21/822 (2006.01) H01L 27/04 (2006.01) H01L 31/08 (2006.01)

Patent

CA 2133082

A sensor element that is adapted to respond to radiation, and which is adapted to the manufacture of a sensor array is manufactured into a single crystal semi-conductor means such as silicon. An anisotropically etched pit is provided under the sen- sing surface, and the pit generally corresponds to the geometry of the sensor element. The geometry is selected to be rectangular and falls along a selected orientation of the particular crystalline structure used for manufacture of the device to thereby allow a high density of sensor elements to provide an efficient array.

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