Integrated, non-volatile, high-speed analog random access...

Details Integrated, non-volatile, high-speed analog random access... Integrated, non-volatile, high-speed analog random access...

G - Physics

11

C

G11C 27/00 (2006.01) G11C 11/14 (2006.01) G11C 11/18 (2006.01) G11C 27/02 (2006.01)

Patent

CA 2060835

INTEGRATED, NON-VOLATILE, HIGH-SPEED ANALOG RANDOM ACCESS MEMORY ABSTRACT This invention provides an integrated, non-volatile, high-speed random access memory. A magnetically switchable ferromagnetic or ferrimagnetic layer is sandwiched between an electrical conductor which provides the ability to magnetize the magnetically switchable layer and a magnetoresistive or Hall effect material which allows sensing the magnetic field which emanates from the magnetization of the magnetically switchable layer. By using this integrated three-layer form, the writing process, which is controlled by the conductor, is separated from the storage medium in the magnetic layer and from the readback process which is controlled by the magnetoresistive layer. A circuit for implementing the memory in CMOS or the like is disclosed. 22

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