Integrated optic modulators with high gain bandwidth product

Details Integrated optic modulators with high gain bandwidth product Integrated optic modulators with high gain bandwidth product

G - Physics

02

F

G02F 1/035 (2006.01) G02F 1/225 (2006.01)

Patent

CA 2318204

The present invention relates to integrated optic modulator devices (1) and methods for their fabrication. Lithium niobate substrates (2) have waveguides (52) fabricated in them for propagating light energy, preferably in Mach Zhender architectures, and in the middle of these waveguides there is a central electrode (51). The waveguides are also bordered by adjacent electrode metallizations (50) of low resistivity, such as copper and silver, to provide the devices with high gain bandwidth products to reduce the cost of drive electronics and simplify processing procedures. The modulator device also includes a buffer layer (55), preferably silicon dioxide. Gain bandwidth products exceed 4.5 x 105. The waveguide is terminated with impedance (54) for best RF performance and an RF driver (56) is connected to the electrodes.

L'invention porte sur des modulateurs optiques intégrés (1) et leur procédé de fabrication. Leurs substrats de niobate de lithium (2) comportent des guides d'ondes (52) de propagation d'énergie lumineuse intégrés à leur structure, de préférence à architecture de Mach Zhende, au milieu desquels se trouve une électrode centrale (51). Lesdits guides d'ondes sont bordés d'électrodes contiguës constituées de métallisations (50) de faible résistivité, par exemple de cuivre ou d'argent, ce qui en fait des dispositifs à gain élevé en largeur de bande à électronique de commande moins onéreuse et à procédures de traitement simplifiées. Le modulateur comporte également une couche tampon (55) de préférence de dioxyde de silicium. Les gains en largeur de bande dépassent 4,5 x 10?5¿. Les guides d'ondes se terminent par des impédances (54) en améliorant les performances RF, et leur étage d'attaque RF est (56) relié aux électrodes.

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