G - Physics – 02 – B
Patent
G - Physics
02
B
G02B 6/12 (2006.01) G02B 6/42 (2006.01) H01S 5/026 (2006.01) H01S 5/10 (2006.01) H01S 5/34 (2006.01)
Patent
CA 2399374
There is disclosed an improved integrated optical device (5a-5g) providing first and second devices (10a-10g; 15a, 15e), optically coupled one to the other and formed in first and second different material systems, one of the first or second devices (10a-10g, 15a, 15e) having a Quantum Well Intermixed (QWI) region (20a, 20g) at or adjacent a coupling region between the first and second devices (10a-10g; 15a, 15e). The first material system may be a III-V semiconductor based on Gallium Arsenide (GaAs) or Indium Phosphide (InP), while the second material system may be Silica (SiO2), Silicon (Si), Lithium Niobate (LiNbo3), a polymer, or glass.
La présente invention concerne un dispositif optique intégré (5a-5g) présentant des premier et second dispositifs (10a-10g; 15a, 15e) couplés optiquement les uns aux autres et formant un premier et un second systèmes de matériaux différents, le premier et/ou le second dispositif (10a-10g, 15a, 15e) comportant une région (20a, 20g) de puits quantiques intermélangés (QWI) (20a, 20g) dans/à proximité d'une région de couplage entre les premier et second dispositifs (10a-10g; 15a, 15e). Le premier système de matériau peut être un semiconducteur III-V à l'arséniure de gallium (GaAs) ou au phosphure d'indium (InP), alors que le second système de matériau peut être de la silice (SiO2), du silicium (Si), du niobate de lithium (LiNbo3), un polymère ou du verre.
Aitchison James Stewart
Hicks Simon Eric
Marsh John Haig
Mcdougall Stewart Duncan
Qiu Bo Cang
Borden Ladner Gervais Llp
The University Court Of The University Of Glasgow
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