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Patent
CA 2449707
A method for forming a hybrid active electronic and optical circuit (103) using a lithography mask (6312) is disclosed. The hybrid active electronic and optical circuit (103) includes an active electronic device and at least one optical device on a Silicon-On-Insulator, SOI, wafer (102). The SOI wafer (102) includes an insulator layer (104) and an upper silicon layer (106). The upper silicon layer (106) includes at least one component of the active electronic device and at least one component of the optical device. The method includes projecting the lithography mask (6312) onto the SOI wafer (102) in order to simultaneously pattern the component of the active electronic device and the component of the optical device on the SOI wafer (102).
L'invention concerne un procédé permettant de former un circuit hybride électronique et optique actif à l'aide d'un masque pour lithographie. Le circuit hybride électronique et optique actif comprend un dispositif électronique actif et au moins un dispositif optique sur une tranche de silicium sur isolant (SOI). La tranche SOI comprenant une couche isolante et une souche de silicium supérieure. La couche de silicium supérieure contient au moins un composant d'un dispositif électronique actif et au moins un composant du dispositif optique. Le procédé comprend la projection du masque de lithographie sur la tranche SOI afin de simultanément former les motifs sur le composant du dispositif électronique actif et sur le composant du dispositif optique de la tranche SOI.
Borden Ladner Gervais Llp
Sioptical Inc.
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