Integrated partial sawing process

H - Electricity – 01 – L

Patent

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H01L 21/78 (2006.01) B28D 5/00 (2006.01) H01L 21/304 (2006.01)

Patent

CA 2113019

A process for partially sawing the streets on semiconductor wafers. After sawing, the streets can be covered by a protective material, and then the wafer continues its processing as before. After the wafer is broken, the protective material may or may not be removed. Additionally, the wafer may be broken into individual chips using a wedge piece that has a number of individual wedges on it, where the individual wedges press against the partially sawn streets, causing the wafer to break.

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