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H01L 31/02 (2006.01) H01L 27/146 (2006.01)
Patent
CA 1223654
Integrated Photo-Responsive Metal Oxide Semiconductor Circuit Abstract An infrared photo-responsive element is monolithically integrated into a source follower circuit of a metal oxide semiconductor device by depositing a layer of a lead chalcogenide as a photo- resistive element forming an ohmic bridge between two metallization strips serving as electrodes of the circuit. Voltage from the circuit varies in response to illumination of the layer by infrared radiation.
429014
Dargo David R.
Jhabvala Murzban D.
Lyons John C.
National Aeronautics And Space Administration
Ogilvy Renault Llp/s.e.n.c.r.l.,s.r.l.
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