Integrated processing for an etch module

Details Integrated processing for an etch module Integrated processing for an etch module

H - Electricity

01

L

H01L 21/308 (2006.01) H01L 21/311 (2006.01) H01L 21/768 (2006.01)

Patent

CA 2193905

A method of fabricating a semiconductor device includes etching holes through atleast one deposited layer to an underlying structure. A hard mask is deposited on an upper surface of a device to be etched, the mask is patterned, and contact or via holes are etched through the patterned hard mask to reach the underlying structure

Méthode de fabrication d'un dispositif semi-conducteur comprenant des trous d'attaque jusqu'à la structure sous-jacente, à travers au moins une couche déposée. Un masque dur est déposé sur une surface supérieure; des motifs sont gravés sur le masque et des trous de contact ou des trous traversants sont pratiqués à travers le masque dur gravé pour atteindre la structure sous-jacente.

Affiliated with

Also associated with

Rating

Integrated processing for an etch module does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated processing for an etch module, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated processing for an etch module will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1394552