Integrated resistor

Details Integrated resistor Integrated resistor

H - Electricity

01

C

356/121

H01C 7/00 (2006.01) H01L 27/02 (2006.01) H01L 27/08 (2006.01) H01L 29/8605 (2006.01)

Patent

CA 1200615

ABSTRACT: "Integrated resistor" The invention relates to an integrated resistor (SP) formed in an epitaxial layer (N-EPI) and provided with at least one tap. In order to reduce field effect action between the resistor and the epitaxial layer the voltage on the two ends (CO4, SN, DN, BN; CO5, SN, DN, BN) of the epitaxial layer under- neath the resistor (SP) tracks the voltage on the two ends (CO3O, CO34) of the resistor. Moreover, the epitaxial layer is short-circuited by means of buried layers (BN) at the locations where the resistance layer (SP) also exhibits a short-circuit, such as underneath the contact area of the tap (CO31, CO32, CO33). (Figure 2).

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