Integrated semiconductor arrangement of the coupling type...

G - Physics – 02 – B

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

345/18, 345/62

G02B 6/12 (2006.01) G02B 6/42 (2006.01) H01L 31/02 (2006.01)

Patent

CA 1291556

ABSTRACT: Integrated semiconductor arrangement of the coupling type between a photodetector and a light wave guide. An integrated semiconductor arrangement of the coupling type between a photodetector D and a liqht wave guide G1, operating in a band of given wavelengths, containing on the surface of a semiconductor substrate S of a III-V compound one after the other a confininq layer CO of III-V compound and atransparent layer C1 of a III-V compound for the operating wavelengths having an index superior to that of the confining layer, the light waveguide G1 being realised in layer C1, and also containing an absorbina layer C3 of a III-V compound for the operating wavelengths havinu an index superior to that of the waveguide, in which layer C3 the photo- detector is realised, characterized in that the absorbinq layer C3 is deposited on top of the transparent layer C1 such that the photodetector is formed on the surface of the light wave guide G1 and coupled to the latter in parallel with its axis over a given couplinq length L2 of which is a function the amount of light issued by the guide and received by the photodetector. This arrangement can also be characterized in that it con- tains, deposited between the transparent layer C1, herein- after called first transparent layer and the absorbing layer C3, a second transparent layer C2 of a III-V compound for the operating wavelengths having an index lying between that of the first transparent layer C1 and that of the absorbing layer C3, in which second transparent layer C2 a second light waveguide G2, re- ferred to as intermediate guide is fabricated, formed on the surface of the guide deposited in the first trans- parent layer C1, hereinafter called main guide G1, and coupled to the latter in parallel with its axis over a coupling length L1, of which is a function the amount of light issued by the main guide G1 and received by the intermediate quide G2. Application: Signal detector and electro-optical signal processing. Reference: Fig. 2d.

541082

LandOfFree

Say what you really think

Search LandOfFree.com for Canadian inventors and patents. Rate them and share your experience with other people.

Rating

Integrated semiconductor arrangement of the coupling type... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated semiconductor arrangement of the coupling type..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated semiconductor arrangement of the coupling type... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFCA-PAI-O-1338884

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.