H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/146
H01L 29/40 (2006.01) H01L 21/285 (2006.01) H01L 23/48 (2006.01) H01L 23/532 (2006.01) H01L 29/45 (2006.01)
Patent
CA 1217574
ABSTRACT OF THE DISCLOSURE An integrated semiconductor circuit including a substrate consisting of silicon having a heavily doped impurity layer formed thereon. An external contacting track level consisting of aluminum or aluminum alloy is connected to the contact regions by means of an intermediate layer consisting of tantalum silicide. The tantalum content of the compound is greater than that required stoichiometrically to produce the intermetallic compound TaSi2. The external contacting track level is preferably in the form of an aluminum or aluminum alloy-tantalum silicide double layer. The tantalum silicide layer simultaneously acts as a diffusion barrier and as a contacting material. The useful life of the electrical conducting paths under temperature and current loads as well as the reliability of the contacts is signi- ficantly increased in VLSI circuits as a result of this metallization.
459106
Neppl Franz
Schwabe Ulrich
Aktiengesellschaft Siemens
Fetherstonhaugh & Co.
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