Integrated semiconductor circuit including a tantalum...

Details Integrated semiconductor circuit including a tantalum... Integrated semiconductor circuit including a tantalum...

H - Electricity

01

L

356/137

H01L 27/04 (2006.01) H01L 23/532 (2006.01)

Patent

CA 1249073

ABSTRACT OF THE DISCLOSURE An integrated semiconductor circuit consisting of a silicon substrate having an impurity doped circuit therein, and a layer of silicon dioxide formed on the substrate and having a contact hole therein overlying the circuit. An outer contact interconnect level composed of aluminum or an aluminum alloy provides electrical contact to the circuit. A tantalum disilicide diffusion barrier layer is disposed between the circuit and the interconnect level, with a layer of substantially pure tantalum both above and below the tantalum disilicide diffusion barrier layer.

506256

Affiliated with

Also associated with

Rating

Integrated semiconductor circuit including a tantalum... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated semiconductor circuit including a tantalum..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated semiconductor circuit including a tantalum... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1245428