Integrated semiconductor circuit structure and method for...

Details Integrated semiconductor circuit structure and method for... Integrated semiconductor circuit structure and method for...

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H01L 27/00 (2006.01) H01L 21/28 (2006.01) H01L 21/3205 (2006.01) H01L 21/70 (2006.01) H01L 21/768 (2006.01) H01L 23/532 (2006.01) H01L 29/49 (2006.01) H05K 1/02 (2006.01)

Patent

CA 1136771

-1- ABSTRACT INTEGRATED SEMICONDUCTOR CIRCUIT AND METHOD FOR MAKING IT. A conductor pattern in a semiconductor device comprises a layer of polysilicon with an overlayer of titanium silicide or tantalum silicide and a layer of silicon dioxide over the silicide layer. Conductivity is improved relative to polysilicon on its own and the layer of silicon dioxide, which can readily be formed by heat treatment in an oxidising atmosphere, can provide insulation for a metallisation layer. The conductor pattern can be formed by depositing titanium or tantalum onto a polysilicon layer and sintering to produce the silicide with excess polysilicon. An application is to integrated circuits.

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