Integrated semiconductor circuits with bipolar components...

Details Integrated semiconductor circuits with bipolar components... Integrated semiconductor circuits with bipolar components...

H - Electricity

01

L

356/124

H01L 27/04 (2006.01) H01L 27/06 (2006.01)

Patent

CA 1212485

ABSTRACT OF THE DISCLOSURE Integrated semiconductor circuits with bipolar components preferably with at least one bipolar transistor and at least two Schottky diodes having different threshold voltages are disclosed along with a method of producing such circuits. The contact from a metal interconnect level to diffused active regions of the circuits comprises a directly deposited silicide of a high melting point metal such as tantalum tungsten molybdenum or titanium. In addition to achieving independence from a metallization grid and achieving low- resistance wiring, the use of the silicide, in conjunction with the high temperature stability of silicides enables its simultaneous use as an implantation mask. The invention allows the production of bipolar integrated circuits in VLSI technology.

434348

Affiliated with

Also associated with

Rating

Integrated semiconductor circuits with bipolar components... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated semiconductor circuits with bipolar components..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated semiconductor circuits with bipolar components... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1234367