Integrated semiconductor diode laser and photodiode structure

Details Integrated semiconductor diode laser and photodiode structure Integrated semiconductor diode laser and photodiode structure

H - Electricity

01

S

345/26, 345/32

H01S 3/098 (2006.01) H01S 5/026 (2006.01) H01S 5/10 (2006.01) H01S 5/14 (2006.01) H01L 33/00 (2006.01)

Patent

CA 2018502

ABSTRACT Integrated semiconductor structure with optically coupled laser diode and photodiode, both devices having etched, vertical facets. The photodiode has a spatially non-uniform sensitivity profile with respect to the incident light beam emitted by the laser. This is due to the varying distance from the laser facet and/or to variations in the angle of incidence and results in photocurrents produced by the photodiode that depend on the intensity distribution of the light beam. The spatially non-uniform sensitivity profile allows the measurement of the far-field intensity distribution of the laser and thus on-wafer screening of lasers with respect to their mode-stability.

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