Integrated semiconductor resistance temperature and...

G - Physics – 01 – N

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341/4, 356/95

G01N 25/04 (2006.01) F25D 21/02 (2006.01) G01F 1/684 (2006.01) G01F 1/699 (2006.01) G01K 7/22 (2006.01)

Patent

CA 1272517

ABSTRACT OF THE DISCLOSURE An integrated sensing device includes a resistance temperature sensor formed in a semi- conductor substrate and a resistance heater which is formed on an insulating layer which covers the surface of the semiconductor substrate. The resistance heater has a low temperature coefficient of resistivity and is positioned adjacent the resistance temperature sensor so the current flow through the resistance heater will generate heat which is transferred through the insulating layer to the resistance temperature sensor. The sensing device is applicable to a variety of sensing systems, such as mass flow measurement systems, dew point detection systems, and frost detection systems.

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