Integrated silicon vacuum micropackage for infrared devices

Details Integrated silicon vacuum micropackage for infrared devices Integrated silicon vacuum micropackage for infrared devices

H - Electricity

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H01L 27/14 (2006.01) H01L 23/10 (2006.01) H01L 23/18 (2006.01) H01L 23/26 (2006.01) H01L 27/146 (2006.01) H01L 27/16 (2006.01) H01L 31/0203 (2006.01)

Patent

CA 2179052

An efficient method brings together two wafers of dies that contain infrared transparent window or top cap with either an infrared detector or emitter array to produce a low cost infrared package. A low thermal conductivity gas or a vacuum may be used between the wafers for enhanced thermal isolation. Joining of the wafers is preferably by solder, although ultrasound bonding can be used.

Procédé efficace d'accouplement de deux puces dont l'une comporte une fenêtre transparente aux IR ou consiste en une plaquette de couverture transparente aux IR, de façon à constituer un boîtier bon marché pour émetteurs ou récepteurs IR. L'intervalle entre les puces peut être placé sous vide ou rempli d'un gaz à faible conduction thermique afin d'assurer une bonne isolation thermique. La jonction entre les puces s'opère de préférence par soudure et éventuellement par soudage aux ultrasons.

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