Interconnection of opposite conductivity type semiconductor...

Details Interconnection of opposite conductivity type semiconductor... Interconnection of opposite conductivity type semiconductor...

H - Electricity

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356/134, 356/8

H01L 21/44 (2006.01) H01L 21/768 (2006.01) H01L 23/522 (2006.01) H01L 23/532 (2006.01)

Patent

CA 1142261

Abstract A technique for making ohmic electrical interconnec- tions between semiconductor regions of opposite con- ductivity type, without requiring metallic interconnec- tion lines. This technique has applicability in any circuit using bipolar devices, and in particular is useful to provide a very dense static memory array of bipolar transistors, To join the opposite conducti- vity regions, intermediate layers are formed including a silicide of a refractory metal, such as W, Mo, Ta, etc. and at least one layer of doped polycrystalline silicon having M and P type regions, the refractory metal silicide forms an electrical connection to at least one doped polysilicon layer of a first conduc- tivity type and to either a single crystal semiconduc- tor region of the opposite conductivity type or to another polysilicon layer which also has the opposite conductivity type. As an example, an N type silicon region is interconnected to a P type silicon region by intermediate layers of N pol licon - refractory metal silicide - P polysilicon.

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